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2SK1221 from FUJI

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2SK1221

Manufacturer: FUJI

N-Channel Silicon Power MOS-FET

Partnumber Manufacturer Quantity Availability
2SK1221 FUJI 4600 In Stock

Description and Introduction

N-Channel Silicon Power MOS-FET The part 2SK1221 is a Power MOSFET manufactured by FUJI. Here are the key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (Vds)**: 500V
- **Drain Current (Id)**: 5A
- **Power Dissipation (Pd)**: 50W
- **Gate-Source Voltage (Vgs)**: ±20V
- **On-Resistance (Rds(on))**: 1.5Ω (typical)
- **Input Capacitance (Ciss)**: 300pF (typical)
- **Output Capacitance (Coss)**: 50pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 10pF (typical)
- **Turn-On Delay Time (td(on))**: 20ns (typical)
- **Turn-Off Delay Time (td(off))**: 50ns (typical)
- **Rise Time (tr)**: 30ns (typical)
- **Fall Time (tf)**: 20ns (typical)
- **Package**: TO-220

These specifications are based on typical operating conditions and may vary slightly depending on the specific application and environmental factors.

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For immediate assistance, call us at +86 533 2716050 or email [email protected]

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