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2SK1152 from 日立

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2SK1152

Manufacturer: 日立

Silicon N-Channel MOS FET

Partnumber Manufacturer Quantity Availability
2SK1152 日立 1444 In Stock

Description and Introduction

Silicon N-Channel MOS FET The part 2SK1152 is a power MOSFET manufactured by Hitachi. Here are the specifications:

- **Type**: N-channel MOSFET
- **Drain-Source Voltage (Vds)**: 900V
- **Drain Current (Id)**: 5A
- **Power Dissipation (Pd)**: 100W
- **Gate-Source Voltage (Vgs)**: ±20V
- **On-Resistance (Rds(on))**: 3.5Ω (typical)
- **Input Capacitance (Ciss)**: 300pF (typical)
- **Output Capacitance (Coss)**: 50pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 10pF (typical)
- **Turn-On Delay Time (td(on))**: 30ns (typical)
- **Turn-Off Delay Time (td(off))**: 100ns (typical)
- **Rise Time (tr)**: 50ns (typical)
- **Fall Time (tf)**: 100ns (typical)

These specifications are based on typical operating conditions and may vary depending on the specific application and environment.

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