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2SD612 from SANYO

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2SD612

Manufacturer: SANYO

NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications

Partnumber Manufacturer Quantity Availability
2SD612 SANYO 100 In Stock

Description and Introduction

NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications The 2SD612 is a silicon NPN epitaxial planar transistor manufactured by SANYO. It is designed for use in general-purpose amplification and switching applications. Key specifications include:

- **Collector-Base Voltage (VCBO):** 60V
- **Collector-Emitter Voltage (VCEO):** 50V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 3A
- **Collector Dissipation (PC):** 25W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (depending on operating conditions)
- **Transition Frequency (fT):** 20MHz (typical)

The transistor is packaged in a TO-220 form factor, which is commonly used for power transistors. It is suitable for applications requiring medium power handling and switching capabilities.

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