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2SD2719 from TOSHIBA

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2SD2719

Manufacturer: TOSHIBA

Power transistor for low frequency applications

Partnumber Manufacturer Quantity Availability
2SD2719 TOSHIBA 3000 In Stock

Description and Introduction

Power transistor for low frequency applications The part 2SD2719 is a silicon NPN epitaxial planar transistor manufactured by TOSHIBA. It is designed for use in general-purpose amplification and switching applications. The key specifications of the 2SD2719 transistor are as follows:

- **Collector-Base Voltage (VCBO):** 60V
- **Collector-Emitter Voltage (VCEO):** 50V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 2A
- **Collector Dissipation (PC):** 1W (at Ta = 25°C)
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 120 to 400 (at VCE = 6V, IC = 0.5A)
- **Transition Frequency (fT):** 120MHz (min)
- **Package:** TO-92MOD

These specifications are based on the datasheet provided by TOSHIBA for the 2SD2719 transistor.

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