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2SD2642 from SANKEN

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2SD2642

Manufacturer: SANKEN

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)

Partnumber Manufacturer Quantity Availability
2SD2642 SANKEN 41 In Stock

Description and Introduction

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) The **2SD2642** is a high-performance NPN bipolar junction transistor (BJT) designed for power amplification and switching applications. Known for its robust construction and reliable operation, this component is commonly used in audio amplifiers, power supply circuits, and industrial control systems.  

With a collector-emitter voltage (VCE) rating of up to 120V and a collector current (IC) capacity of 12A, the 2SD2642 is well-suited for medium- to high-power applications. Its high current gain (hFE) ensures efficient signal amplification, while a low saturation voltage minimizes power loss during switching operations.  

The transistor is housed in a TO-220 package, providing effective heat dissipation and mechanical durability. Proper heat sinking is recommended for optimal performance in high-power scenarios.  

Engineers and designers favor the 2SD2642 for its balance of power handling, thermal stability, and cost-effectiveness. When integrating this component, adherence to specified operating conditions—such as voltage, current, and temperature limits—is essential to ensure longevity and reliability.  

In summary, the 2SD2642 is a versatile and dependable choice for applications requiring efficient power control and amplification, making it a staple in electronic circuit design.

Partnumber Manufacturer Quantity Availability
2SD2642 50 In Stock

Description and Introduction

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) The 2SD2642 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. It is designed for use in high-speed switching applications and features the following specifications:

- **Collector-Base Voltage (VCBO):** 120V
- **Collector-Emitter Voltage (VCEO):** 120V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 1.5A
- **Collector Dissipation (PC):** 1W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to 150°C
- **DC Current Gain (hFE):** 120 to 400
- **Transition Frequency (fT):** 120MHz
- **Package:** TO-92MOD

These specifications are typical for the 2SD2642 transistor and are subject to standard manufacturing variations.

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