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3.052ms

2SD2242

Power Device

Partnumber Manufacturer Quantity Availability
2SD2242 500 In Stock

Description and Introduction

Power Device The 2SD2242 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. It is designed for use in high-speed switching and amplification applications. Key specifications include:

- Collector-Base Voltage (VCBO): 160V
- Collector-Emitter Voltage (VCEO): 160V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 1.5A
- Collector Dissipation (PC): 20W
- Junction Temperature (Tj): 150°C
- Storage Temperature (Tstg): -55°C to 150°C
- DC Current Gain (hFE): 60 to 320
- Transition Frequency (fT): 80MHz

The transistor is available in a TO-220 package.

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