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2SD2170 from KEXIN

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15.137ms

2SD2170

Manufacturer: KEXIN

Medium Power Transistor(Motor, Relay drive) (90 , 2A)

Partnumber Manufacturer Quantity Availability
2SD2170 KEXIN 15366 In Stock

Description and Introduction

Medium Power Transistor(Motor, Relay drive) (90 , 2A) The part 2SD2170 is a silicon NPN epitaxial planar transistor manufactured by KEXIN. Its key specifications include:

- **Collector-Emitter Voltage (VCEO):** 150V
- **Collector-Base Voltage (VCBO):** 160V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 1.5A
- **Collector Dissipation (PC):** 20W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 40 to 320 (at IC = 0.5A, VCE = 5V)
- **Transition Frequency (fT):** 20MHz (min)
- **Package:** TO-220

These specifications are typical for the 2SD2170 transistor and are used in various amplification and switching applications.

Partnumber Manufacturer Quantity Availability
2SD2170 383 In Stock

Description and Introduction

Medium Power Transistor(Motor, Relay drive) (90 , 2A) The part number 2SD2170 is a silicon NPN epitaxial planar transistor. Here are the key specifications:

- **Type**: NPN
- **Material**: Silicon
- **Structure**: Epitaxial Planar
- **Collector-Emitter Voltage (VCEO)**: 120V
- **Collector-Base Voltage (VCBO)**: 120V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 1.5A
- **Collector Dissipation (PC)**: 20W
- **Junction Temperature (Tj)**: 150°C
- **Transition Frequency (fT)**: 60MHz
- **DC Current Gain (hFE)**: 60 to 320
- **Package**: TO-220

These specifications are typical for the 2SD2170 transistor and are used in various electronic applications requiring medium power amplification.

Partnumber Manufacturer Quantity Availability
2SD2170 ROHM 5700 In Stock

Description and Introduction

Medium Power Transistor(Motor, Relay drive) (90 , 2A) The 2SD2170 is a silicon NPN epitaxial planar transistor manufactured by ROHM. Here are the key specifications:

- **Type**: NPN
- **Material**: Silicon
- **Structure**: Epitaxial Planar
- **Collector-Emitter Voltage (VCEO)**: 120V
- **Collector-Base Voltage (VCBO)**: 120V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 1.5A
- **Collector Dissipation (PC)**: 1W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320
- **Transition Frequency (fT)**: 80MHz
- **Package**: TO-92MOD

These specifications are based on the standard operating conditions and typical values provided by ROHM for the 2SD2170 transistor.

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