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2SD1633 from MAT

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2SD1633

Manufacturer: MAT

Power Device

Partnumber Manufacturer Quantity Availability
2SD1633 MAT 86 In Stock

Description and Introduction

Power Device The 2SD1633 is a silicon NPN epitaxial planar transistor manufactured by Matsushita (now Panasonic). Here are the key specifications:

- **Type:** NPN
- **Material:** Silicon
- **Structure:** Epitaxial Planar
- **Collector-Emitter Voltage (Vceo):** 150V
- **Collector-Base Voltage (Vcbo):** 150V
- **Emitter-Base Voltage (Vebo):** 5V
- **Collector Current (Ic):** 1.5A
- **Collector Dissipation (Pc):** 20W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320
- **Transition Frequency (ft):** 50MHz

These specifications are based on the manufacturer's datasheet and are subject to the operating conditions and test environments specified therein.

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