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2SD1556

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

Partnumber Manufacturer Quantity Availability
2SD1556 80 In Stock

Description and Introduction

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) The 2SD1556 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. It is designed for use in high-speed switching applications. Key specifications include:

- Collector-Emitter Voltage (VCEO): 1500V
- Collector Current (IC): 5A
- Power Dissipation (PC): 50W
- Transition Frequency (fT): 3MHz
- Collector-Base Voltage (VCBO): 1500V
- Emitter-Base Voltage (VEBO): 7V
- DC Current Gain (hFE): 8 to 40
- Operating Junction Temperature (Tj): -55°C to +150°C
- Package: TO-3P

These specifications are typical for high-voltage, high-current switching applications.

Partnumber Manufacturer Quantity Availability
2SD1556 TOSHIBA 56 In Stock

Description and Introduction

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) The 2SD1556 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. Here are the key specifications:

- **Type:** NPN
- **Material:** Silicon
- **Structure:** Epitaxial Planar
- **Collector-Emitter Voltage (VCEO):** 150V
- **Collector-Base Voltage (VCBO):** 150V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 1.5A
- **Collector Dissipation (PC):** 20W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (at IC = 0.5A, VCE = 5V)
- **Transition Frequency (fT):** 60MHz (at IC = 0.5A, VCE = 5V, f = 100MHz)
- **Package:** TO-220F

These specifications are typical for the 2SD1556 transistor as provided by Toshiba.

Partnumber Manufacturer Quantity Availability
2SD1556 SAMSUNG 1450 In Stock

Description and Introduction

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) The 2SD1556 is a transistor manufactured by SAMSUNG. It is an NPN type transistor designed for general-purpose amplification and switching applications. Key specifications include:

- **Collector-Base Voltage (VCBO):** 60V
- **Collector-Emitter Voltage (VCEO):** 50V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 1.5A
- **Collector Dissipation (PC):** 1W
- **DC Current Gain (hFE):** 120 to 400
- **Transition Frequency (fT):** 150MHz
- **Operating Temperature Range:** -55°C to +150°C

The transistor is typically available in a TO-92 package.

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