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2SD1450 from PANASONIC

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2SD1450

Manufacturer: PANASONIC

Small-signal device

Partnumber Manufacturer Quantity Availability
2SD1450 PANASONIC 5000 In Stock

Description and Introduction

Small-signal device The 2SD1450 is a silicon NPN epitaxial planar transistor manufactured by Panasonic. Here are the key specifications:

- **Type**: NPN
- **Material**: Silicon
- **Structure**: Epitaxial Planar
- **Collector-Emitter Voltage (VCEO)**: 150V
- **Collector-Base Voltage (VCBO)**: 150V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 1.5A
- **Collector Dissipation (PC)**: 20W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 40 to 320
- **Transition Frequency (fT)**: 50MHz
- **Package**: TO-220

These specifications are typical for the 2SD1450 transistor as provided by Panasonic.

Partnumber Manufacturer Quantity Availability
2SD1450 100 In Stock

Description and Introduction

Small-signal device The 2SD1450 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. It is designed for use in high-speed switching and amplification applications. Key specifications include:

- Collector-Base Voltage (VCBO): 150 V
- Collector-Emitter Voltage (VCEO): 150 V
- Emitter-Base Voltage (VEBO): 5 V
- Collector Current (IC): 1.5 A
- Collector Dissipation (PC): 20 W
- Junction Temperature (Tj): 150°C
- Storage Temperature (Tstg): -55 to 150°C
- DC Current Gain (hFE): 60 to 320
- Transition Frequency (fT): 50 MHz

The transistor is packaged in a TO-220F (SC-67) package.

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