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2SD1419DETL-E

Silicon NPN Epitaxial

Partnumber Manufacturer Quantity Availability
2SD1419DETL-E,2SD1419DETLE 1000 In Stock

Description and Introduction

Silicon NPN Epitaxial The part number 2SD1419DETL-E is a transistor manufactured by ROHM Semiconductor. Below are the key specifications:

- **Type**: NPN Bipolar Junction Transistor (BJT)
- **Package**: TO-252 (DPAK)
- **Collector-Emitter Voltage (Vceo)**: 120V
- **Collector Current (Ic)**: 5A
- **Power Dissipation (Pd)**: 20W
- **DC Current Gain (hFE)**: 100 to 320 (at Ic = 1A, Vce = 5V)
- **Transition Frequency (fT)**: 30MHz
- **Operating Temperature Range**: -55°C to +150°C
- **Applications**: General-purpose amplification and switching.

This transistor is designed for use in various electronic circuits, including power amplification and switching applications.

Partnumber Manufacturer Quantity Availability
2SD1419DETL-E,2SD1419DETLE 散新HITACHI 1000 In Stock

Description and Introduction

Silicon NPN Epitaxial The part 2SD1419DETL-E is manufactured by HITACHI. It is a PNP-type silicon epitaxial planar transistor, commonly used in general-purpose amplification and switching applications. The key specifications include:

- **Collector-Base Voltage (VCBO):** -50V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -2A
- **Collector Dissipation (PC):** 1W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to 150°C
- **DC Current Gain (hFE):** 60 to 320 (at VCE = -5V, IC = -0.5A)
- **Transition Frequency (fT):** 120MHz (at VCE = -5V, IC = -0.5A, f = 100MHz)

The transistor is packaged in a TO-252 (DPAK) surface-mount package. It is designed for high-speed switching and amplification in various electronic circuits.

Partnumber Manufacturer Quantity Availability
2SD1419DETL-E,2SD1419DETLE not originalHITACHI 1000 In Stock

Description and Introduction

Silicon NPN Epitaxial The part 2SD1419DETL-E is manufactured by HITACHI. It is a silicon NPN epitaxial planar type transistor, commonly used in general-purpose amplification and switching applications. Key specifications include:

- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 50V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 1.5A
- Collector Dissipation (PC): 1W
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE): 120 to 400
- Operating Temperature Range: -55°C to +150°C

The transistor is housed in a TO-92 package.

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