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2SD1410A from TOSHIBA

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15.625ms

2SD1410A

Manufacturer: TOSHIBA

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS.

Partnumber Manufacturer Quantity Availability
2SD1410A TOSHIBA 4 In Stock

Description and Introduction

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. The 2SD1410A is a silicon NPN epitaxial planar transistor manufactured by TOSHIBA. Below are its key specifications:

- **Type**: NPN
- **Material**: Silicon
- **Package**: TO-220
- **Collector-Base Voltage (VCBO)**: 150V
- **Collector-Emitter Voltage (VCEO)**: 150V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 10A
- **Collector Dissipation (PC)**: 80W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 40 to 320 (at IC = 5A, VCE = 2V)
- **Transition Frequency (fT)**: 10MHz (min)
- **Applications**: General-purpose amplification and switching.

These specifications are based on TOSHIBA's datasheet for the 2SD1410A transistor.

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