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2SD1265

Si NPN triple diffused junction. AF power amplifier.

Partnumber Manufacturer Quantity Availability
2SD1265 50 In Stock

Description and Introduction

Si NPN triple diffused junction. AF power amplifier. The 2SD1265 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. Here are the key specifications:

- **Type:** NPN
- **Material:** Silicon
- **Package:** TO-220F
- **Collector-Emitter Voltage (Vceo):** 120V
- **Collector-Base Voltage (Vcbo):** 120V
- **Emitter-Base Voltage (Vebo):** 5V
- **Collector Current (Ic):** 3A
- **Collector Dissipation (Pc):** 25W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320
- **Transition Frequency (ft):** 20MHz

These specifications are typical for the 2SD1265 transistor and are used in various electronic applications requiring medium power amplification.

Partnumber Manufacturer Quantity Availability
2SD1265 PANASONIC 20 In Stock

Description and Introduction

Si NPN triple diffused junction. AF power amplifier. The part 2SD1265 is a silicon NPN epitaxial planar transistor manufactured by PANASONIC. Its key specifications include:

- **Collector-Emitter Voltage (VCEO):** 120V
- **Collector-Base Voltage (VCBO):** 120V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 3A
- **Collector Dissipation (PC):** 25W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (at IC = 0.5A, VCE = 2V)
- **Transition Frequency (fT):** 20MHz (min)
- **Package:** TO-220

These specifications are typical for the 2SD1265 transistor, which is commonly used in power amplification and switching applications.

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