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2SD1000-T1 from NEC

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2SD1000-T1

Manufacturer: NEC

Silicon transistor

Partnumber Manufacturer Quantity Availability
2SD1000-T1,2SD1000T1 NEC 950 In Stock

Description and Introduction

Silicon transistor The 2SD1000-T1 is a power transistor manufactured by NEC. Here are the key specifications:

- **Type**: NPN Bipolar Junction Transistor (BJT)
- **Package**: TO-220
- **Collector-Emitter Voltage (Vceo)**: 60V
- **Collector-Base Voltage (Vcbo)**: 80V
- **Emitter-Base Voltage (Vebo)**: 5V
- **Collector Current (Ic)**: 3A
- **Power Dissipation (Pd)**: 25W
- **DC Current Gain (hFE)**: 60-320
- **Transition Frequency (ft)**: 50MHz
- **Operating Temperature Range**: -55°C to +150°C

These specifications are based on NEC's datasheet for the 2SD1000-T1 transistor.

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