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2SC9014 from CJ

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16.602ms

2SC9014

Manufacturer: CJ

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE

Partnumber Manufacturer Quantity Availability
2SC9014 CJ 36000 In Stock

Description and Introduction

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE The 2SC9014 is a general-purpose NPN transistor. According to Ic-phoenix technical data files, the manufacturer CJ (Chengjie Electronics) provides the following specifications for the 2SC9014:

- **Collector-Base Voltage (VCBO):** 50V
- **Collector-Emitter Voltage (VCEO):** 45V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 100mA
- **Power Dissipation (Ptot):** 400mW
- **Transition Frequency (fT):** 150MHz
- **DC Current Gain (hFE):** 60 to 400
- **Package:** TO-92

These are the key specifications for the 2SC9014 transistor as provided by the manufacturer CJ.

Partnumber Manufacturer Quantity Availability
2SC9014 TOS 20 In Stock

Description and Introduction

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE The 2SC9014 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Toshiba. Below are the key specifications for the 2SC9014 transistor:

- **Type**: NPN
- **Material**: Silicon (Si)
- **Maximum Collector-Base Voltage (V_CBO)**: 50V
- **Maximum Collector-Emitter Voltage (V_CEO)**: 45V
- **Maximum Emitter-Base Voltage (V_EBO)**: 5V
- **Maximum Collector Current (I_C)**: 100mA
- **Maximum Power Dissipation (P_C)**: 400mW
- **Transition Frequency (f_T)**: 150MHz
- **DC Current Gain (h_FE)**: 60 to 600 (depending on the operating conditions)
- **Package**: TO-92

These specifications are based on standard operating conditions and may vary slightly depending on the specific batch or variant. Always refer to the official datasheet for precise details.

Partnumber Manufacturer Quantity Availability
2SC9014 TOSHIBA 2368 In Stock

Description and Introduction

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE The 2SC9014 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Toshiba. Below are the key specifications:

- **Type**: NPN
- **Collector-Base Voltage (VCBO)**: 50V
- **Collector-Emitter Voltage (VCEO)**: 45V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 150mA
- **Power Dissipation (Ptot)**: 400mW
- **DC Current Gain (hFE)**: 60 to 600 (depending on the specific variant)
- **Transition Frequency (fT)**: 150MHz
- **Operating Temperature Range**: -55°C to +150°C
- **Package**: TO-92

These specifications are typical for the 2SC9014 transistor and may vary slightly depending on the specific variant or batch.

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