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2SC741 from MIT

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2SC741

Manufacturer: MIT

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

Partnumber Manufacturer Quantity Availability
2SC741 MIT 507 In Stock

Description and Introduction

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) The 2SC741 is a high-frequency transistor manufactured by Mitsubishi Electric Corporation (MIT). It is designed for use in RF amplification and oscillation applications. Key specifications include:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Emitter Voltage (Vceo)**: 30V
- **Collector Current (Ic)**: 50mA
- **Power Dissipation (Pc)**: 300mW
- **Transition Frequency (fT)**: 1.5GHz
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)
- **Gain (hFE)**: 20 to 200
- **Package**: TO-92

These specifications make it suitable for VHF and UHF band applications, such as in communication equipment and RF circuits.

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