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2SC5609 from HIT

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2SC5609

Manufacturer: HIT

Silicon PNP epitaxial planer type

Partnumber Manufacturer Quantity Availability
2SC5609 HIT 50 In Stock

Description and Introduction

Silicon PNP epitaxial planer type The 2SC5609 is a high-frequency, high-speed switching transistor manufactured by Hitachi. Below are the key specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Usage**: High-speed switching and amplification in RF applications
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 15V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 150mW
- **Transition Frequency (fT)**: 7GHz (typical)
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)
- **Gain (hFE)**: 20 to 200
- **Package**: TO-92

These specifications are based on the manufacturer's datasheet and are subject to standard operating conditions.

Partnumber Manufacturer Quantity Availability
2SC5609 HIT/TOSHIBA 500 In Stock

Description and Introduction

Silicon PNP epitaxial planer type The 2SC5609 is a high-frequency, high-speed switching transistor manufactured by Hitachi and Toshiba. Below are the key specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Emitter Voltage (VCEO)**: 30V
- **Collector-Base Voltage (VCBO)**: 30V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 1A
- **Collector Dissipation (PC)**: 1W
- **Junction Temperature (Tj)**: 150°C
- **Transition Frequency (fT)**: 800MHz
- **Gain Bandwidth Product (hFE)**: 120-240
- **Package**: TO-92

This transistor is designed for use in high-speed switching and amplification applications, particularly in RF and VHF circuits.

Partnumber Manufacturer Quantity Availability
2SC5609 PANASONIC 25550 In Stock

Description and Introduction

Silicon PNP epitaxial planer type The 2SC5609 is a high-frequency transistor manufactured by Panasonic. Below are the key specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Usage**: High-frequency amplification
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 15V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 150mW
- **Junction Temperature (Tj)**: 125°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **Transition Frequency (fT)**: 5.5GHz
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)
- **Gain (hFE)**: 20 to 200
- **Package**: SOT-323 (SC-70)

These specifications are based on the typical operating conditions and may vary slightly depending on the specific application and environment.

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