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2SC5440 from PANASONIC

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2SC5440

Manufacturer: PANASONIC

Power Device

Partnumber Manufacturer Quantity Availability
2SC5440 PANASONIC 130 In Stock

Description and Introduction

Power Device The 2SC5440 is a high-frequency, high-speed switching transistor manufactured by Panasonic. Below are the key specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Emitter Voltage (VCEO)**: 50V
- **Collector-Base Voltage (VCBO)**: 60V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 1A
- **Total Power Dissipation (PT)**: 1W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **Transition Frequency (fT)**: 200MHz
- **DC Current Gain (hFE)**: 120 to 400
- **Package**: TO-92

These specifications are typical for the 2SC5440 transistor and are subject to standard manufacturing tolerances.

Partnumber Manufacturer Quantity Availability
2SC5440 NEC 43 In Stock

Description and Introduction

Power Device The 2SC5440 is a high-frequency, high-speed switching transistor manufactured by NEC. It is designed for use in RF and microwave applications, particularly in VHF and UHF bands. Key specifications include:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Emitter Voltage (VCEO)**: 20V
- **Collector-Base Voltage (VCBO)**: 30V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 150mW
- **Transition Frequency (fT)**: 7GHz
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)
- **Gain (hFE)**: 20 to 200
- **Package**: TO-92

These specifications make the 2SC5440 suitable for low-noise amplification and high-speed switching in communication devices.

Partnumber Manufacturer Quantity Availability
2SC5440 HITACHI 100 In Stock

Description and Introduction

Power Device The 2SC5440 is a high-frequency, high-speed switching transistor manufactured by HITACHI. Below are the key specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Usage**: High-speed switching, amplification in RF and VHF bands
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 15V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 200mW
- **Transition Frequency (fT)**: 7GHz (typical)
- **Collector Capacitance (CC)**: 0.6pF (typical)
- **Package**: SOT-323 (miniature surface-mount package)

These specifications are based on HITACHI's datasheet for the 2SC5440 transistor.

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