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2SC5229

NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

Partnumber Manufacturer Quantity Availability
2SC5229 570 In Stock

Description and Introduction

NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications The 2SC5229 is a high-frequency, high-speed switching transistor manufactured by Toshiba. It is designed for use in RF amplifiers and oscillators, particularly in VHF and UHF bands. Key specifications include:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 15V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 150mW
- **Transition Frequency (fT)**: 7GHz
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)
- **Gain (hFE)**: 20 to 200
- **Package**: SOT-323 (SC-70)

These specifications make the 2SC5229 suitable for applications requiring high-speed switching and low noise performance in RF circuits.

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