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2SB673 from TOSHIBA

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2SB673

Manufacturer: TOSHIBA

isc Silicon PNP Darlington Power Transistor

Partnumber Manufacturer Quantity Availability
2SB673 TOSHIBA 50 In Stock

Description and Introduction

isc Silicon PNP Darlington Power Transistor The 2SB673 is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Here are the key specifications:

- **Type**: PNP
- **Material**: Silicon
- **Structure**: Epitaxial Planar
- **Collector-Base Voltage (VCBO)**: -60V
- **Collector-Emitter Voltage (VCEO)**: -60V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -3A
- **Collector Dissipation (PC)**: 25W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320 (at VCE = -5V, IC = -1A)
- **Transition Frequency (fT)**: 20MHz (at VCE = -5V, IC = -1A, f = 1MHz)
- **Package**: TO-220

These specifications are typical for the 2SB673 transistor and are based on Toshiba's datasheet.

Partnumber Manufacturer Quantity Availability
2SB673 TOS 5000 In Stock

Description and Introduction

isc Silicon PNP Darlington Power Transistor The manufacturer TOS (Terms of Service) specifications for part 2SB673 are not explicitly provided in Ic-phoenix technical data files. For detailed information regarding the TOS, it is recommended to refer to the official documentation or contact the manufacturer directly.

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