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2SB566

Silicon PNP Power Transistors

Partnumber Manufacturer Quantity Availability
2SB566 20 In Stock

Description and Introduction

Silicon PNP Power Transistors The 2SB566 is a PNP silicon epitaxial planar transistor. Here are its key specifications:

- **Type**: PNP
- **Material**: Silicon
- **Structure**: Epitaxial planar
- **Collector-Base Voltage (VCBO)**: -60V
- **Collector-Emitter Voltage (VCEO)**: -50V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -3A
- **Collector Dissipation (PC)**: 25W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320 (at IC = 0.5A, VCE = -5V)
- **Transition Frequency (fT)**: 20MHz (at IC = 0.5A, VCE = -5V, f = 1MHz)
- **Package**: TO-220

These specifications are typical for the 2SB566 transistor and are used in various amplification and switching applications.

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