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2SB564

Conductor Products, Inc. - Si PNP LOW-POWER TRANSISTORS

Partnumber Manufacturer Quantity Availability
2SB564 5000 In Stock

Description and Introduction

Conductor Products, Inc. - Si PNP LOW-POWER TRANSISTORS The 2SB564 is a PNP silicon epitaxial planar transistor. Here are its key specifications:

- **Type:** PNP
- **Material:** Silicon
- **Structure:** Epitaxial Planar
- **Collector-Base Voltage (VCBO):** -60V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -3A
- **Collector Dissipation (PC):** 25W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (at VCE = -5V, IC = -1A)
- **Transition Frequency (fT):** 10MHz (at VCE = -5V, IC = -1A, f = 1MHz)
- **Package:** TO-220

These specifications are typical for the 2SB564 transistor.

Partnumber Manufacturer Quantity Availability
2SB564 NEC 7028 In Stock

Description and Introduction

Conductor Products, Inc. - Si PNP LOW-POWER TRANSISTORS The 2SB564 is a PNP silicon transistor manufactured by NEC. According to the NEC specifications, it has the following key characteristics:

- **Type**: PNP silicon transistor
- **Collector-Base Voltage (VCBO)**: -60V
- **Collector-Emitter Voltage (VCEO)**: -50V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -3A
- **Total Power Dissipation (PT)**: 25W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320 (depending on operating conditions)
- **Transition Frequency (fT)**: 10MHz (typical)
- **Package**: TO-220

These specifications are based on NEC's datasheet for the 2SB564 transistor.

Partnumber Manufacturer Quantity Availability
2SB564 NEC/FSC 28575 In Stock

Description and Introduction

Conductor Products, Inc. - Si PNP LOW-POWER TRANSISTORS The part 2SB564 is a PNP silicon transistor. According to the NEC/FSC (Nippon Electric Company/Fujitsu Semiconductor) specifications, it has the following key characteristics:

- **Type**: PNP Silicon Transistor
- **Collector-Base Voltage (VCBO)**: -60V
- **Collector-Emitter Voltage (VCEO)**: -50V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -3A
- **Total Power Dissipation (PT)**: 25W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C

These specifications are typical for the 2SB564 transistor as per NEC/FSC documentation.

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