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2SB1475 from NEC

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2SB1475

Manufacturer: NEC

PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

Partnumber Manufacturer Quantity Availability
2SB1475 NEC 3000 In Stock

Description and Introduction

PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER Part 2SB1475 is a PNP transistor manufactured by NEC. The specifications for this transistor include:

- **Type:** PNP
- **Material:** Silicon
- **Collector-Base Voltage (VCBO):** -50V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -1A
- **Total Power Dissipation (PT):** 1W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature Range (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (depending on the specific conditions)

These specifications are based on the NEC datasheet for the 2SB1475 transistor.

Partnumber Manufacturer Quantity Availability
2SB1475 NEC 1900 In Stock

Description and Introduction

PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER Part 2SB1475 is a PNP transistor manufactured by NEC. According to the NEC specifications, it has the following key characteristics:

- **Type:** PNP Silicon Epitaxial Planar Transistor
- **Collector-Base Voltage (VCBO):** -50V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -1A
- **Total Power Dissipation (PT):** 900mW
- **Junction Temperature (Tj):** 125°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (at VCE = -6V, IC = -150mA)
- **Transition Frequency (fT):** 120MHz (at VCE = -6V, IC = -10mA, f = 100MHz)
- **Package:** TO-92

These specifications are based on the NEC datasheet for the 2SB1475 transistor.

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