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2SB1427T100E from ROHM

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2SB1427T100E

Manufacturer: ROHM

Power transistor (?20V, ?2A)

Partnumber Manufacturer Quantity Availability
2SB1427T100E ROHM 16000 In Stock

Description and Introduction

Power transistor (?20V, ?2A) The part 2SB1427T100E is a PNP bipolar junction transistor (BJT) manufactured by ROHM. Key specifications include:

- **Type**: PNP
- **Collector-Base Voltage (VCBO)**: -50V
- **Collector-Emitter Voltage (VCEO)**: -50V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -3A
- **Power Dissipation (PD)**: 1W
- **DC Current Gain (hFE)**: 120 to 400
- **Operating Temperature Range**: -55°C to +150°C
- **Package**: TO-220F

These specifications are based on the standard datasheet provided by ROHM for the 2SB1427T100E transistor.

Partnumber Manufacturer Quantity Availability
2SB1427T100E 翻新ROHM 6000 In Stock

Description and Introduction

Power transistor (?20V, ?2A) The part number 2SB1427T100E is a PNP transistor manufactured by ROHM. It is designed for general-purpose amplification and switching applications. Key specifications include:

- **Type**: PNP Bipolar Junction Transistor (BJT)
- **Collector-Emitter Voltage (VCE)**: -50V
- **Collector Current (IC)**: -3A
- **Power Dissipation (PD)**: 1W
- **DC Current Gain (hFE)**: 120 to 400
- **Package**: TO-220F (isolated type)
- **Operating Temperature Range**: -55°C to 150°C

This transistor is suitable for use in power management, audio amplification, and other low-frequency applications. It is a refurbished part, meaning it has been restored to meet original specifications.

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