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2SB1397 from SANYO

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2SB1397

Manufacturer: SANYO

PNP Epitaxial Planar Silicon Transistors Compact Motor Driver Applications

Partnumber Manufacturer Quantity Availability
2SB1397 SANYO 800 In Stock

Description and Introduction

PNP Epitaxial Planar Silicon Transistors Compact Motor Driver Applications **Introduction to the 2SB1397 Transistor by SANYO**  

The **2SB1397** is a PNP bipolar junction transistor (BJT) manufactured by **SANYO**, designed for general-purpose amplification and switching applications. This component is part of the **2SB series**, known for reliable performance in low to medium-power circuits.  

With a collector-emitter voltage (**VCEO**) of **-50V** and a collector current (**IC**) of **-3A**, the 2SB1397 is suitable for applications requiring moderate power handling. Its DC current gain (**hFE**) ranges between **60 and 320**, ensuring stable amplification characteristics. The transistor features a compact **TO-220** package, making it compatible with standard PCB designs and heat dissipation solutions.  

Common applications include audio amplifiers, voltage regulators, and motor control circuits, where efficient switching and signal processing are essential. Engineers and hobbyists favor the 2SB1397 for its durability and consistent performance under typical operating conditions.  

When integrating this transistor, proper heat management and adherence to datasheet specifications are recommended to ensure optimal functionality and longevity. As with all BJTs, attention to biasing and load conditions is crucial for reliable circuit operation.  

The 2SB1397 remains a practical choice for designers seeking a cost-effective, robust PNP transistor for various electronic projects.

Partnumber Manufacturer Quantity Availability
2SB1397 SANYO 1000 In Stock

Description and Introduction

PNP Epitaxial Planar Silicon Transistors Compact Motor Driver Applications The part 2SB1397 is a PNP silicon epitaxial planar transistor manufactured by SANYO. Its specifications include:

- **Collector-Base Voltage (VCBO):** -50V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -3A
- **Collector Dissipation (PC):** 25W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (at VCE = -5V, IC = -1A)
- **Transition Frequency (fT):** 20MHz (at VCE = -5V, IC = -1A, f = 1MHz)
- **Package:** TO-220

This transistor is commonly used in power amplification and switching applications.

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