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2SB1218A from TOS,TOSHIBA

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16.602ms

2SB1218A

Manufacturer: TOS

Small-signal device

Partnumber Manufacturer Quantity Availability
2SB1218A TOS 283 In Stock

Description and Introduction

Small-signal device The manufacturer TOS specifications for part 2SB1218A are as follows:

- **Type**: PNP Silicon Epitaxial Planar Transistor
- **Collector-Emitter Voltage (VCEO)**: -50V
- **Collector-Base Voltage (VCBO)**: -50V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -3A
- **Collector Dissipation (PC)**: 25W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320 (at VCE = -5V, IC = -0.5A)
- **Transition Frequency (fT)**: 20MHz (at VCE = -5V, IC = -0.5A, f = 1MHz)
- **Package**: TO-220

These specifications are provided for reference and may vary slightly depending on the manufacturer and specific batch. Always refer to the datasheet for precise details.

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