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XP2501 from PANASONIC, Panasonic 6900pcs , SOT-353S,Composite Device
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XP2501 PANASONIC N/a 6900
Electrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V I = 10 µA, I = 060 VCBO C ECollector-emitter voltage (Base open) V I = 2 mA, I = 050 VCEO C BEmitter-base voltage (Collector open) V I = 10 µA, I = 07 VEBO E CCollector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 µACBO CB ECollector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 µACEO CE BForward current transfer ratio h V = 10 V, I = 2 mA 160 460 FE CE C*h ratio h V = 10 V, I = 2 mA 0.50 0.99 FE FE(Small/ CE CLarge)Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.1 0.3 VCE(sat) C BTransition frequency f V = 10 V, I = −2 mA, f = 200 MHz 150 MHzT CB ECollector output capacitance C V = 10 V, I = 0, f = 1 MHz 3.5 pFob CB E(Common base, input open circuited)Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. : Ratio between 2 elements*Note) The part number in the parenthesis shows conventional part number.Publication date: August 2003 SJJ00156BED 1(0.425)1.25±0.100 to 0.1 0.9±0.12.1±0.1+0.20.9–0.15˚0.2±0.1XP02501P  T I  V I  IT a C CE C B60 240250T = 25°CaV = 10 VCEI = 160 µA T = 25°CB a50 200200140 µA40 160120 µA150100 µA30 12080 µA10020 60 µA 8040 µA5010 4020 µA0 0001 24 6 80 0 0.2 0.4 0.6 0.8 1.00 40 80 120 160( ) Base current I (mA)Ambient temperature T (°C) Collector-emitter voltage V VBa CEI  V I  V V  IB BE C BE CE(sat) C21.210240I / I = 10C BV = 10 V V = 10 VCE CET = 25°Ca1.0200100.816025°C0.61120T = 75°C −25°Ca0.48025°C−1T = 75°C10 a0.240−25°C−200 10−1 20 0.2 0.4 0.6 0.8 1.0 10 110 100 0.4 0.8 1.2 1.6 2.0( ) ( )Base-emitter voltage V V ( ) Collector current I mABase-emitter voltage V VBE CBEh  I f  I NV  IFE C T E C240300600V = 10 V V = 10 VV = 10 V CB CE CET = 25°C G = 80 dBa V Function = FLAT200500T = 25°C240 a160400 T = 75°Ca18025°CR = 100 kΩg 120300−25°C1208020022 kΩ60 4.7 kΩ4010000 0−1 2 2 3−1 2 −10 –1 –10 –10 10 10 1010 110 10( )( ) Collector current I µA( ) Emitter current I mACollector current I mA CEC2 SJJ00156BED(m )Forward current transfer ratio h Base current I A Total power dissipation P (mW)FE B T( ) Collector current I (mA)Transition frequency f MHz Collector current I (mA)CT C( ) ( )Noise voltage NV mV Collector-emitter saturation voltage V VCollector current I (mA)CE(sat)Cand material(1) if any of the products or technologies described in this material and controlled under the "ForeignExchange and Foreign Trade Law" .(2) The technical information described in this material is limited to showing representative characteris-tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-tual property right or any other rights owned by our .(3) the use of theproduct or technologies as described in this material.(4)
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