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XP1214 from PANASONIC, Panasonic 19700pcs , SOT-353S,Composite Device
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XP1214 PANASONIC N/a 19700
Electrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V I = 10 µA, I = 050 VCBO C ECollector-emitter voltage (Base open) V I = 2 mA, I = 050 VCEO C BCollector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 µACBO CB ECollector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 µACEO CE BEmitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.2 mAEBO EB CForward current transfer ratio h V = 10 V, I = 5 mA 80 FE CE C*h Ratio h V = 10 V, I = 5 mA 0.50 0.99 FE FE(Small CE C/Large)Collector-emitter saturation voltage V I = 10 mA, I = 0.3 mA 0.25 VCE(sat) C BOutput voltage high-level V V = 5 V, V = 0.5 V, R = 1 kΩ 4.9 VOH CC B LOutput voltage low-level V V = 5 V, V = 2.5 V, R = 1 kΩ 0.2 VOL CC B LInput resistance R −30% 10 +30% kΩ1Resistance ratio R / R 0.17 0.21 0.25 1 2Transition frequency f V = 10 V, I = −2 mA, f = 200 MHz 150 MHzT CB ENote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. : Ratio between 2 elements*Note) The part number in the parenthesis shows conventional part number.Publication date: June 2003 SJJ00139BED 1(0.425)1.25±0.100 to 0.1 0.9±0.12.1±0.1+0.20.9–0.15˚0.2±0.1XP01214P  T I  V V  IT a C CE CE(sat) C250 100160I / I = 10C B T = 25°CaI = 1.0 mAB2000.9 mA120 0.8 mA 100.7 mA0.6 mA1500.5 mA0.4 mA1801000.3 mAT = 75°Ca25°C0.1400.2 mA50−25°C0.1 mA0 0.0100 40 80 120 1600.1 1 10 10001 21 48 6 02( )Ambient temperature T °C Collector current I (mA)Collector-emitter voltage V (V)a CCEh  I C  V I  VFE C ob CB O IN4400 610V = 5 Vf = 1 MHz OV = 10 VCE T = 25°CaI = 0ET = 25°Ca53300 104T = 75°Ca2200 3 1025°C2−25°C100 1010 0 11 10 100 1 000 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4Collector current I (mA) Collector-base voltage V (V) Input voltage V (V)C CB INV  IIN O100V = 0.2 VOT = 25°Ca1010.10.010.1 1 10 100Output current I (mA)O2 SJJ00139BEDInput voltage V (V) Forward current transfer ratio h Total power dissipation P (mW)IN FE TCollector output capacitanceC (pF) Collector current I (mA)ob C (Common base, input open circuited) Collector-emitter saturation voltage V (V)Output current I (µA)CE(sat)Oand material(1) if any of the products or technologies described in this material and controlled under the "ForeignExchange and Foreign Trade Law" .(2) The technical information described in this material is limited to showing representative characteris-tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-tual property right or any other rights owned by our .(3) the use of theproduct or technologies as described in this material.(4)
XP1214-(TX) PANASONIC

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