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XP1117 from PANASONI, Panasonic 24000pcs , 353,Composite Device
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XP1117 PANASONI N/a 24000
Electrical Characteristics (Ta=25˚C)Parameter Symbol Conditions min typ max UnitCollector to base voltage V I = –10µ A, I = 0 –50 VCBO C ECollector to emitter voltage V I = –2mA, I = 0 –50 VCEO C BI V = –50V, I = 0 – 0.1 µ ACBO CB ECollector cutoff currentI V = –50V, I = 0 – 0.5 µ ACEO CE BEmitter cutoff current I V = –6V, I = 0 – 0.01 mAEBO EB CForward current transfer ratio h V = –10V, I = –5mA 160 460FE CE C*1Forward current transfer h ratio h (small/large) V = –10V, I = –5mA 0.5 0.99FE FE CE CCollector to emitter saturation voltage V I = –10mA, I = – 0.3mA – 0.25 VCE(sat) C BOutput voltage high level V V = –5V, V = – 0.5V, R = 1kΩ –4.9 VOH CC B LOutput voltage low level V V = –5V, V = –2.5V, R = 1kΩ – 0.2 VOL CC B LTransition frequency f V = –10V, I = 1mA, f = 200MHz 80 MHzT CB EInput resistance R –30% 22 +30% kΩ1*1 Ratio between 2 elementsNote) The Part number in the Parenthesis shows conventional part number.11.25±0.10 (0.425)0 to 0.1 0.9±0.12.1±0.1+0.20.9–0.15°0.2±0.1Composite Transistors XP01117P — TaT250200150100500020 40 60 80 100 120 140 160( )Ambient temperature Ta ˚CI — V V — I h — IC CE CE(sat) C FE C–120 –100400I /I =10C BTa=25˚CV =–10VCE–30–100 I =–1.0mAB–0.9mA–0.8mA –10 300–0.7mA–80 –0.6mA–0.5mA –3–0.4mATa=75˚C–60 –1 200 Ta=75˚C–0.3–0.3mA 25˚C–4025˚C–0.2mA–0.1 100–25˚C–25˚C–20–0.1mA–0.030 –0.01 00 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000( ) ( )Collector to emitter voltage VCE V Collector current IC mA Collector current I (mA)CC — V I — V V — Iob CB O IN IN O6 –10000–100V =–5VO V =–0.2Vf=1MHz OTa=25˚CTa=25˚CIE=0–3000Ta=25˚C –305–1000–10µ4–300 –3–1003 –1–30–0.32–10 –0.11–3 –0.03–10 –0.01–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100Input voltage V (V)Collector to base voltage V (V) IN Output current I (mA)CB O2( ) Collector current I (mA) Total power dissipation P (mW)Collector output capacitance Cob pF C TCollector to emitter saturation voltage V (V)Output current IO ( A) CE(sat)( )Input voltage VIN V Forward current transfer ratio hFEand material(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-ment if any of the products or technologies described in this material and controlled under the"Foreign Exchange and Foreign Trade Law" .(2) The technical information described in this material is limited to showing representative character-istics and applied circuit examples of the products. It does not constitute the warranting of industrialproperty, the granting of relative rights, or the granting of any license.(3)

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