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XN6211 from PANASONIC, Panasonic 3000pcs , SOT-163S,Composite Device
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XN6211 PANASONIC N/a 3000
Electrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V I = 10 µA, I = 050 VCBO C ECollector-emitter voltage (Base open) V I = 2 mA, I = 050 VCEO C BCollector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 µACBO CB ECollector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 µACEO CE BEmitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.5 mAEBO EB CForward current transfer ratio h V = 10 V, I = 5 mA 35 FE CE C*h Ratio h V = 10 V, I = 5 mA 0.50 0.99 FE FE(Small CE C/Large)Collector-emitter saturation voltage V I = 10 mA, I = 0.3 mA 0.25 VCE(sat) C BOutput voltage high-level V V = 5 V, V = 0.5 V, R = 1 kΩ 4.9 VOH CC B LOutput voltage low-level V V = 5 V, V = 2.5 V, R = 1 kΩ 0.2 VOL CC B LInput resistance R −30% 10 +30% kΩ1Resistance ratio R / R 0.8 1.0 1.2 1 2Transition frequency f V = 10 V, I = −2 mA, f = 200 MHz 150 MHzT CB ENote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. : Ratio between 2 elements*Note) The part number in the parenthesis shows conventional part number.Publication date: July 2003 SJJ00100BED 1+0.2 +0.251.1 1.500 to 0.1 –0.1 (0.65) –0.05+0.3 +0.21.1 2.8–0.1 –0.35˚0.4±0.2XN06211P  T I  V V  IT a C CE CE(sat) C500 160 100I / I = 10C BT = 25°CaI = 1.0 mAB0.9 mA0.8 mA4000.7 mA120100.6 mA0.5 mA0.4 mA3000.3 mA80 120025°CT = 75°C0.2 mA a400.1100−25˚C0.1 mA0 0.0100 40 80 120 16001 21 48 6 02 0.1 1 10 100( ) Collector-emitter voltage V (V) Collector current I (mA)Ambient temperature T °CCE Cah  I C  V I  VFE C ob CB O IN44006 10f = 1 MHz V = 5 VOV = 10 VCET = 25°CI = 0 aET = 25°Ca5330010T = 75°Ca4200 231025°C2−25°C1001010011 10 100 1 0000.1 1 10 1000.4 0.6 0.8 1.0 1.2 1.4Collector current I (mA)Collector-base voltage V (V)C Input voltage V (V)CBINV  IIN O100V = 0.2 VO T = 25°Ca1010.10.010.1 1 10 100Output current I (mA)O2 SJJ00100BEDForward current transfer ratio hInput voltage V (V) Total power dissipation P (mW)FEIN TCollector output capacitanceC (pF)ob Collector current I (mA) (Common base, input open circuited) CCollector-emitter saturation voltage V (V)Output current I (µA) CE(sat)Oand material(1) if any of the products or technologies described in this material and controlled under the "ForeignExchange and Foreign Trade Law" .(2) The technical information described in this material is limited to showing representative characteris-tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-tual property right or any other rights owned by our .(3) the use of theproduct or technologies as described in this material.(4)
XN6211-(TX) PANASONIC

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