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WS27C256L-12DMB-WS27C256L-12TMB-WS27C256L-15DMB-WS27C256L-15TMB-WS27C256L-20DMB Fast Delivery,Good Price
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WS27C256L-12DMB |WS27C256L12DMBWSIN/a676avaiMilitary 32K x 8 CMOS EPROM
WS27C256L-12TMB |WS27C256L12TMBWSIN/a2000avaiMilitary 32K x 8 CMOS EPROM
WS27C256L-15DMB |WS27C256L15DMBWSIN/a600avaiMilitary 32K x 8 CMOS EPROM
WS27C256L-15TMB |WS27C256L15TMBWSIN/a900avaiMilitary 32K x 8 CMOS EPROM
WS27C256L-20DMB |WS27C256L20DMBWSIN/a700avaiMilitary 32K x 8 CMOS EPROM


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WS27C256L-12DMB-WS27C256L-12TMB-WS27C256L-15DMB-WS27C256L-15TMB-WS27C256L-20DMB
Military 32K x 8 CMOS EPROM
PRODUCT SELECTION GUIDE
PIN CONFIGURATION
Military 32K x 8 CMOS EPROM
KEY FEATURES High Performance CMOS • Ceramic Leadless Chip Carrier (CLLCC)

— 120 ns Access Time • EPI Processing Fast Programming — Latch-Up Immunity to 200 mA DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000 Volts 300 Mil DIP or Standard 600 Mil DIP • JEDEC Standard Pin Configuration
GENERAL DESCRIPTION

The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory
organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to
operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate
EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and
microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the
potential of no-wait state operation. And where this parameter is important, the WS27C256L provides the user with
a very fast 35 nsec TOE output enable time.
The WS27C256L is offered in a 28 pin 300 mil skinny CERDIP or the standard 600 mil CERDIP, and also in a
32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. All packages incorporate the
standard JEDEC EPROM pinout.
AC READ CHARACTERISTICS Over Operating Range (See Above)
DC READ CHARACTERISTICS
Over Operating Range. (See Above)
WS27C256L
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS*

Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7VPP with Respect to Ground...................–0.6V to + 14VCC Supply Voltage with
Respect to Ground ....................................–0.6V to +7V
ESD Protection..................................................>2000V
NOTES:
1. The supply current is the sum of ICC and IPP. The maximum current value is with Outputs O0 to O7 unloaded. CMOS inputs: VIL = GND ± 0.3V, VIH = VCC± 0.3 V.
NOTE:
3. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven – see timing
diagram.
WS27C256L
CAPACITANCE(5)
TA = 25°C, f = 1 MHz
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD (High Impedance Test Systems)
NOTES:
5. This parameter is only sampled and is not 100% tested. Typical values are for TA = 25°C and nominal supply voltages.
NOTE:
4. OE may be delayed up to tCE – tOE after the falling edge of CE without impact on tCE.
PROGRAMMING INFORMATION
DC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V. See Notes 8, 9 and 10)
WS27C256L
AC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V)
PROGRAMMING WAVEFORM
ORDERING INFORMATION
WS27C256L
NOTE:
The actual part marking will not include the initials "WS."
*SMD product. See page 4-1 for SMD number.
The WS27C256L is programmed using Algorithm C shown on page 5-7.
MODE SELECTION

The modes of operation of the WS27C256L are listed below. A single 5 V power supply is required in the read
mode. All inputs are TTL levels except for VPP and A9 for device signature.
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