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WS27C010L-12CMB-WS27C010L-12DMB-WS27C010L-15DMB-WS27C010L-17DMB-WS27C010L-20DMB Fast Delivery,Good Price
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WS27C010L-12CMB |WS27C010L12CMBWSIN/a200avaiMilitary 128K x 8 CMOS EPROM
WS27C010L-12DMB |WS27C010L12DMBWSIN/a400avaiMilitary 128K x 8 CMOS EPROM
WS27C010L-15DMB |WS27C010L15DMBWSIN/a200avaiMilitary 128K x 8 CMOS EPROM
WS27C010L-17DMB |WS27C010L17DMBWSIN/a300avaiMilitary 128K x 8 CMOS EPROM
WS27C010L-20DMB |WS27C010L20DMBWSIN/a300avaiMilitary 128K x 8 CMOS EPROM


WS27C010L-12DMB ,Military 128K x 8 CMOS EPROMPIN CONFIGURATIONTOP VIEWChip Carrier CERDIPV 1 32 VPP CC2 31A PGM163 30A NC1543 2 32 31 301 A 4 29 ..
WS27C010L-15DMB ,Military 128K x 8 CMOS EPROMFEATURES• High Performance CMOS • DESC SMD No. 5962-89614— 90 ns Access Time• Compatible with JEDE ..
WS27C010L-17DMB ,Military 128K x 8 CMOS EPROMGENERAL DESCRIPTIONThe WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programma ..
WS27C010L-20DMB ,Military 128K x 8 CMOS EPROMapplications. Its standard JEDEC EPROM pinouts provide for automatic upgradedensity paths for exist ..
WS27C256L-12DMB ,Military 32K x 8 CMOS EPROMPIN CONFIGURATIONTOP VIEWChip Carrier CERDIP1 28V V43 2 30 PP CC32 311A A 2 27 AA5 29 12 146 8A 3 2 ..
WS27C256L-12TMB ,Military 32K x 8 CMOS EPROMapplications. All packages incorporate thestandard JEDEC EPROM pinout.
XC4003E ,Logic Cell Array FamilyFeaturesDescriptionThe XC4000E family of Field-Programmable Gate Arrays• Third Generation Field-Pro ..
XC4003E-1PC84C ,Field programmable gate array.features, including specialA separate option converts the 16x2 RAM in any CLB into ahigh-speed cloc ..
XC4003E-2PQ100C ,Field programmable gate array.applications.references are made to timing or power. FPGAs are ideal for shortening design and deve ..
XC4003E-3PC84C ,Field programmable gate array.features, an XC4000E bitstream cannot be loaded into anConfigurable RAM ContentXC4000 device.XC4000X ..
XC4003E-3PQ100C ,Field programmable gate array.FeaturesSpecifications and package/pin information are covered inseparate sections for each family t ..
XC4003E-3VQ100C ,Field programmable gate array.features, an XC4000E bitstream cannot be loaded into anConfigurable RAM ContentXC4000 device.XC4000X ..


WS27C010L-12CMB-WS27C010L-12DMB-WS27C010L-15DMB-WS27C010L-17DMB-WS27C010L-20DMB
Military 128K x 8 CMOS EPROM
PRODUCT SELECTION GUIDE
PIN CONFIGURATION
Military 128K x 8 CMOS EPROM
KEY FEATURES High Performance CMOS • DESC SMD No. 5962-89614

— 90 ns Access Time • Compatible with JEDEC 27010 and Fast Programming 27C010 EPROMs EPI Processing • JEDEC Standard Pin Configuration
— Latch-Up Immunity to 200 mA — 32 Pin CERDIP Package
— ESD Protection Exceeds 2000 Volts — 32 Pin Leadless Chip Carrier (CLLCC)
GENERAL DESCRIPTION

The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory
organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to
operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned
split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and
microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the
potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with
a very fast 35 nsec TOE output enable time.
The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier
(CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade
density paths for existing 128K and 256K EPROM users.
AC READ CHARACTERISTICS Over Operating Range with VPP = VCC.
DC READ CHARACTERISTICS
Over Operating Range. (See Above)
WS27C010L
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS*

Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7VPP with Respect to Ground...................–0.6V to + 14VCC Supply Voltage with
Respect to Ground ....................................–0.6V to +7V
ESD Protection..................................................>2000V
NOTES:
1. The supply current is the sum of ICC and IPP. The maximum current value is with Outputs O0 to O7 unloaded. CMOS inputs: VIL = GND ± 0.3V, VIH = VCC± 0.3 V.
NOTE:
3. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven – see timing
diagram.
WS27C010L
CAPACITANCE(5)
TA = 25°C, f = 1 MHz
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD (High Impedance Test Systems)
NOTE:
7. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES:
5. This parameter is only sampled and is not 100% tested. Typical values are for TA = 25°C and nominal supply voltages.
NOTE:
4. OE may be delayed up to tCE – tOE after the falling edge of CE without impact on tCE.
PROGRAMMING INFORMATION
DC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.25 ± 0.25 V, VPP = 12.75 ± 0.25 V. See Notes 8, 9 and 10)
WS27C010L
AC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.25 ± 0.25 V, VPP = 12.75 ± 0.25 V)
PROGRAMMING WAVEFORM
ORDERING INFORMATION
WS27C010L
NOTE:
14. The actual part marking will not include the initials "WS."
*SMD product. See page 4-2 for SMD number.
The WS27C010L is programmed using Algorithm E shown on page 5-11.
(This product can also be programmed by using National Semiconductor's 27C010 Programming Algorithm.)
MODE SELECTION

The modes of operation of the WS27C010L are listed below. A single 5 V power supply is required in the read
mode. All inputs are TTL levels except for VPP and A9 for device signature.
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