IC Phoenix
 
Home ›  VV4 > VND830E,DOUBLE CHANNEL HIGH SIDE DRIVER
VND830E Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
VND830ESTN/a7937avaiDOUBLE CHANNEL HIGH SIDE DRIVER


VND830E ,DOUBLE CHANNEL HIGH SIDE DRIVERAbsolute Maximum RatingsSymbol Parameter Value UnitV DC Supply Voltage 41 VCC- V Reverse DC Supply ..
VND830LSP13TR ,DOUBLE CHANNEL HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV DC Supply Voltage 41 VCC- V Reverse DC Supply V ..
VND830MSP ,DOUBLE CHANNEL HIGH SIDE DRIVERELECTRICAL CHARACTERISTICS (8VVND830PEP ,DOUBLE CHANNEL HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV DC Supply Voltage 41 VCC- V Reverse DC Supply V ..
VND830PEP ,DOUBLE CHANNEL HIGH SIDE DRIVERELECTRICAL CHARACTERISTICS (8VVND830PEP-E ,DOUBLE CHANNEL HIGH SIDE DRIVERELECTRICAL CHARACTERISTICS (8VWFF10N65 , Silicon N-Channel MOSFET
WFF12N65 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF630 , Silicon N-Channel MOSFET


VND830E
DOUBLE CHANNEL HIGH SIDE DRIVER
VND830-E
DOUBLE CHANNEL HIGH SIDE DRIVER
Table 1. General Features

(*) Per each channel
■ CMOS COMPATIBLE INPUTS
■ OPEN DRAIN STATUS OUTPUTS
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ LOSS OF GROUND PROTECTION
■ VERY LOW STAND-BY CURRENT
■ REVERSE BATTERY PROTECTION (**)
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION

The VND830-E is a monolithic device made by
using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground. Active VCC pin
voltage clamp protects the devices against low
energy spikes (see ISO7637 transient
compatibility table).
Figure 1. Package

Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects open
load condition both is on and off state. Output
shorted to VCC is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.
Table 2. Order Codes

Note: (*) See application schematic at page 9
VND830-E
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
VND830-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data

Note:(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
Note:(**) When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
VND830-E
ELECTRICAL CHARACTERISTICS

(8V(Per each channel)
Table 5. Power Output

Note: (**) Per device.
Table 6. Protection (Per each channel) (See note 1)

Note:1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles
Table 7. VCC - Output Diode
VND830-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. Status Pin
Table 9. Switching (VCC=13V)
Table 10. Openload Detection
Table 11. Logic Input
VND830-E
Table 12. Truth Table
Figure 5. Switching time Waveforms
VND830-E
Table 13. Electrical Transient Requirements On VCC Pin
VND830-E
Figure 6. Waveforms
VND830-E
Figure 7. Application Schematic
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY

Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / IS(on)max.
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the of
the device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2 /RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggest to utilize Solution 2 (see
below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating.
The same applies if the device will be subject to
transients on the VCC line that are greater than the ones
shown in the ISO T/R 7637/1 table.
VND830-E
.µC I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
OPEN LOAD DETECTION IN OFF STATE

Off state open load detection requires an external pull-up
resistor (RPU) connected between OUTPUT pin and a
positive supply voltage (VPU) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid VOUT to be higher than
VOlmin; this results in the following condition
VOUT=(VPU/(RL+RPU))RL2) no misdetection when load is disconnected: in this
case the VOUT has to be higher than VOLmax; this
results in the following condition RPU<(VPU–VOLmax)/
IL(off2).
Because Is(OFF) may significantly increase if Vout is
pulled high (up to several mA), the pull-up resistor RPU
should be connected to a supply that is switched OFF
when the module is in standby.
The values of VOLmin, VOLmax and IL(off2) are available in
the Electrical Characteristics section.
Figure 8. Open Load detection in off state
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED