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VN50300L
Enhancement-Mode MOSFET Transistors
VISHAY
VN50300LNN50300T
Vishay Siliconix
N-Channel 500-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDSton) Max (C2) Vegan) (V) ID (A)
VN50300L 500 300 @ VGS = 10 V 1 to 4.5 0.033
VN50300T 300 @ VGS = 10 V 1 to 4.5 0.022
FEATURES BENEFITS APPLICATIONS
. Moderate On-Resistance: 240 Q . Low Offset Voltage
q High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors,etc.
0 Telephone Mute Switches, Ringer Circuits
q Power Supply, Converters
Control
Device Marking
Top View
V1 = Part Number Code for VN50300T
w = Week Code
. Secondary Breakdown Free: 520 V o Full-Voltage Operation
. Low Power/Voltage Driven . Easily Driven VWthout Buffer
. Low Input and Output Leakage . Low Error Voltage
q Excellent Thermal Stability o No High-Temperature q Motor
"Run-Away"
TO-226AA TO 236
TO-92 -
( ) (SOT-23)
s Device Marking
Front View
"S"VN5 I
G O300L
Xxyy s 2 E ,
"S" = Siliconix Logo
D xxyy= Date Code
Top View
Top View VN50300T
VN50300L
" Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol VN50300L VN50300T Unit
Drain-Source Voltage VDS 500 500 V
Gate-Source Voltage VGS i 30 i 30
TA-- 25°C 0.033 0.022
Continuous Drain Current (TJ = 150°C) ID
TA-- 100°C 0.021 0.013 A
Pulsed Drain Currenta IDM 0.013 0.08
TA-- 25''C 0.8 0.35
Power Dissipation PD W
TA-- 100°C 0.32 0.14
Thermal Resistance, Junction-to-Ambient RthJA 156 350 'C/W
Operating Junction and Storage Temperature Range Tc, Tsig -55 to 150 ''C
a. Pulse width limited by maximumjunction temperature.
DocumentNumber: 70216
S-04279-Rev. D, 16-Jul-01
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VN50300LNN50300T
Vishay Siliconix
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 WA 500 520
Gate-Threshold Voltage Vegan) Vos = Kss, ID = 10 11A 1 3.5 4.5
1hos=0V,Vss--ce20V i100
Gate-Bod Leaka e I nA
y g GSS l To =125°C i500
VDS = 250 V, VGS = 0 V 0.05
Zero Gate Volta e Drain Current loss
g I T: = 125°C 5 ”A
On-State Drain Currentb 'D(on) VDS = 10 V, VGS = 10 V 15 30 mA
VGS=10V,ID=10mA 250 300
Drain-Source On-Resistanceb rDS(0n) VGS = 10 V, ID = 5 mA 240 Q
T: = 125°C 450 700
Forward Transconductancdo gis 5 14
VDs=15V, lro=10mA mS
Common Source Output Conductanceb gos 0.005
Dynamic
Input Capacitance Ciss 5 20
Output Capacitance Coss Vos = i? "ittis = 0 V 1.7 10 pF
Reverse Transfer Capacitance Crss 0.5 5
Switchinge
tdmn) 4.5 8
Turn-On Time
t, VDD = 25 v, RL = 2_5 kg 7 12
ID; 10 mA,VGEN=10V ns
‘dmm RG = 25 Q 8 20
Turn-Off Time
tf 60 90
a. For DESIGN AID ONLY, not subject to production testing. VND050
b. Pulse test: PW s300 us duty cycle s2%.
c. Switching time is essentially independent of operating temperature.
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DocumentNumber: 70216
S-04279-Reu. D, 16-Jul-01
VISHAY
VN50300LNN50300T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID— Drain Current (mA)
ID — Drain Current (mA)
roam) — Drain-Source On-Resistance (Q)
Ohmic Region Characteristics
VGS =10
0 1 2 3
I/os - Drain-to-Source Voltage(
Transfer Characteristics
ID - Drain Current (A)
N/os =15V TJ=-55°C ft
25''C "g?
125°C ",,d
_-.-..
2 3 4 5 6 7
N/ss - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
I/cs = 10 v -.,,w'''''''"
-----"
0 5 10 15 20 25
rDs(o,-.) — Drain-Source On-Resistance (£2 )
rDs(0n) — On—Resistance (Q ) ID — Drain Current (mA)
(Normalized)
Output Characteristics for Low Gate Drive
VGS=7V 5V
//:i':,'f
0.4 0.8 1.2 1.6 2.0
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Gate-to-Source Voltage
ID =2mA
4 8 12 16 20
N/ss - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
VGS =10V Atf'
s,/y''s?rroA
w,,,,,,'''''"
w,,,,,,,?'"
-10 30 70 110 150
T: - Junction Temperature CC)
DocumentNumber: 70216
S-04279-Rev. D, 16-Jul-01
www.vishay.com
VN50300LNN50300T
VISHAY
Vishay
Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID — Drain Cun'ent (mA)
Threshold Region
TJ=150°C
C — Capacitance (pF)
t— Switching Time (ns)
Capacitance
VGS =0V
10 _ f=1MHz
\ C iss
0 10 20 30 40 50
Vos - Drain-to-Source Voltage (V)
100 Load Condition Effects on Switching
VDD=25V
RG=259
Vss=0to10V
1 10 100
ID - Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Gate Charge
ID = 10 mA
'll; 20
> w,,,,,:::,,'''')''''
e It,',','''''
, Vos = 250 v F"
E ssl'"", 400 V
- IO -
0 25 50 100 150 200
0g - Total Gate Charge (pC)
Duty Cycle = 0.5
E ,t':i,s
if=il-s. 0.1
a 0.01
Single Pulse
0.1 1 IO
Notes:
-l " _
1. Duty Cycle, D = i,
2. Per Unit Base _ RthJA = 156°CIW
3. TJM - TA = PDMZmJAm
100 1K 10K
t1 - Square Wave Pulse Duration (sec)
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Document Number: 70216
S-04279-Reu. D, 16-Jul-01
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