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TN0601LSI/VISHAYN/a81000avaiEnhancement-Mode MOSFET Transistors
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TN0601L-VN0606L-VN66AFD
Enhancement-Mode MOSFET Transistors
VISHAY
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDSton) Max (C2) Vegan) (V) ID (A)
TN0601L 1.8@VGs=10V th5to2 0.47
VN0606L 60 3 @ VGS = 10 v 0.8 to 2 0.33
VN66AFD 3 @ VGS = 10 v 0.8 to 2.5 1.46
FEATURES BENEFITS APPLICATIONS
. Low On-Resistance: 1.2 Q q Low Offset Voltage q Direct Logic-Level Interface: TTL/CMOS
Low Threshold: <1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
T0-226AA
(TO-92)
Top View
TN 0601 L
VN0606L
Low-Voltage Operation
Easily Driven 1/Nfoout Buffer
High-Speed Circuits
Low Error Voltage
Device Marking
Front View
TN0601L
"S" TN
0601 L
VN0606L
"S'' VN
"S'' = Siliconix Logo
xxyy = Date Code
q Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
q Battery Operated Systems
q Solid-State Relays
TO-2203D
(Tab Drain)
Device Marking
s F?,- Front View
VN66AFD
G r214]:
u J - VN66AFD
"S" xxyy
D T.. "S" = Siliconix Logo
u J xxyy = Date Code
Top View
VN66AFD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TN0601 L VN0606L VN66AFDb Unit
Drain-Source Voltage Vos 60 60 60 V
Gate-Source Voltage VGs d: 20 d: 30 d: 30
Continuous Drain Current TA-- 25°C I 0.47 0.33 1.46
(TJ = 150°C) TA-- 100°C D 0.29 0.21 0.92 A
Pulsed Drain Currenta IDM 1.5 1.6 3
TA-- 25°C 0.8 0.8 15
Power Dissipation PD W
TA-- 100°C 0.32 0.32 6
Thermal Resistance, Junction-to-Ambient RNA 156 156
Thermal Resistance, Junction-to-Case Rthcc 8.3
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
b. Reference case for all temperature testing.
Document Number: 70201 www.vishay.com
S-04279-Rev. E, 16-Jul-01 11-1
TN0601L, VN0606L, VN66AFD
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
TN0601 L VN0606L VN66AFD
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 WA 70 60 60 60
Vos = VGS, ID = 0.25 mA 1.6 0.5 2 v
Gate-Threshold Voltage VGS(th) VDS = l/ss, ID = 1 mA 1.7 0.8 2 0.8 2 5
vDs=ov,sz=i3ov i100 i100
Gate-Body Leakage less I To = 125°C i500 nA
VDS=OV,VGS=:1:20V $10
VDS=60V,VGS=0V 10
I T J = 125°C 500
Zero Gate VoltageDrain Current IDss VDS = 48 V, N/ss = 0 V 1 1 11A
T J = 125''C 100
TC = 125°C 10
Vos = 10 V, VGS = 4.5 v 0.5 0.25
On-State Drain Currentb low") A
Vros=10 V,Vss= 10 v 2.4 1 1.5 1.5
v55: 3.5V, ID-- 0.04A 4 5
sz=45 v, ko-- 0.25A 3
l TJ = 125°C 3.8 6
VGS= 5V, b-- 0.3A 2.3 5
Drain-Source On-Resistanceb rDS(on) Q
VGs=10V,lD=0.5A 1.2 3
l T J = 125"C 2.3 6
VGs=10V,lD=1A 1.3 1.8 3
l TC = 125°C 2.5 6
Forward Transconductancdo gfs Vos = 10 V, ID = 0.5 A 350 200 170 170
Common Source Output Conductanceb Jos Vos = 10 V, b = 0.1 A 0.3 m8
Dynamic
Input Capacitance Ciss 35 60 50 50
Output Capacitance Coss Vos = 1221/1313: 0 V, 25 50 40 40 pF
Reverse Transfer Capacitance Crss 6 10 10 10
Switching''
Turn-On Time tON VDD = 25 V, RL = 23 Q 8 15 10 15
IDE1A,VGEN=10V ns
Turn-Off Tlme ton: RG = 25 Q 9 15 10 15
a. For DESIGN AID ONLY, not subject to production testing.. VNDQ06
b. Pulse test: PW s 300 us duty cycle 52%.
C. Switching time is essentially independent of operating temperature.
www.vishay.com
DocumentNumber: 70201
S-04279-Rev. E, 16-Jul-01
VISHAY
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
8 V 100 V - 10 V
VGS = 10 v GS
tij.] ii"
‘5 E 60
.5 (E)
L, - 40
0 1 2 3 4 5 O 0.4 0.8 1.2 1.6 2.0
I/os - Drain-to-Source Voltage (V) Vos - Drain-to-Source Voltage (V)
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
T: = -55''C / a l
Y''''''''" 25 C 1.0A
0.8 - I/os =15V l
125°C E
'ii.] 8
E 0.6 g
(i 0.4 6
0 2 4 6 8 10 O 4 8 12 16 20
VGS - Gate-Source Voltage (V) Vss - Gate-Source Voltage (V)
Normalized On-Resistance
On-Resistance vs. Drain Current vs. Junction Temperature
2.5 2.25 I
A V = 10 V
_ Cl 2 00 GS /
v 2.0 g I D = 1.0 A
8 ‘3 1 75
£9 .5 .
g-,' 1 5 v 10 v g A /42 A
ED . GS = ' RD
o; _---.. 6 g 1.50 p'"
6 ID a
8 g ‘5 1.25
S 1.0 u? g
$ (,-i 1
ii, 'il 1.00
til 0.5 '
E if 0.75
0 0.50
0 0.4 0.8 1.2 1.6 2.0 -50 -10 30 70 110 150
lo - Drain Current (A) To - Junction Temperature (°C)
DocumentNumber: 70201 www.vishaycoir
S-04279-Rev. E, 16-Jul-01
TN0601L, VN0606L, VN66AFD VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID — Drain Cun'ent (mA)
VGS — Gate-to-Source Voltage (V)
Threshold Region Capacitance
VDS = 5 v Ves = 0 V
100 f= 1 MHz
T J = 150°C
'ty.. so 1
IT, 60
8 'N,,,,
I 40 'C Ciss
O NC''"""--:-.:-
""-----..
l \COSS ""------.
"ss........ Crss
0.5 1.0 1.5 2.0 0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V) Ws - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
15.0 I I 100
Vor, = 25 v
lro=1.0A / Rs=25Q
12.5 /''''" 50 VGS=Oto1OV
10.0 VDS=30V / 'ii'] 20
',,ps''''" E
7.5 g 10
// k',
- u) 5
5.0 /'" Vos = 48 v .L
2.5 / 2
0 /- 1
0 100 200 300 400 500 600 0.1 1 10
0g - Total Gate Charge (pC) ID - Drain Current(A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA)
Duty Cycle = 0.5
TV Notes:
..,b'. a =
8 E 0.1 PDM
E F, ,
8 F, -1 n _
.5 = - te -
E 1. Duty Cycle, D = T
5 0.01 2. PerUnitBase=RmJA= 156°CNV
3. T - T = P z (t)
Single Pulse JM A DM WA
0.1 0.5 1 5 10 50 100 500 1K 5 K 10 K
11 - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70201
S-04279-Rev. E, 16-Jul-01
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