USB10H ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications than standard SO-8); low profile (1mm thick). Load switch Battery protection P ..
USB1T1102MHX ,Universal Serial Bus Peripheral Transceiver with Voltage RegulatorFeaturesThis chip provides a USB Transceiver functionality with a
USB10H
Dual P-Channel 2.5V Specified PowerTrench MOSFET
USB10H February 1999 USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced-1.9 A, -20 V. R = 0.170 Ω @ V = -4.5 V DS(on) GS using Fairchild Semiconductor's advanced PowerTrench R = 0.250Ω @ V = -2.5 V DS(on) GS process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for Low gate charge (3 nC typical). superior switching performance. Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications High performance trench technology for extremely where the bigger more expensive SO-8 and TSSOP-8 low R . DS(ON) packages are impractical. TMSuperSOT -6 package: small footprint (72% smaller Applications than standard SO-8); low profile (1mm thick). Load switch Battery protection Power management D2 S1 4 3 D1 2 5 G2 S2 TM 1 6 SuperSOT -6 G1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V I Drain Current - Continuous (Note 1a) -1.9 A D - Pulsed -5 P Power Dissipation for Single Operation (Note 1a) 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 J stg °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 130 ° RθJA C/W R Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W θJC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity USB10H 7’’ 8mm 3000 units .306 1999 USB10H Rev. C
