UPG2214TK-E2-A ,1/2W low voltage L,S-band SPDT switch.APPLICATIONS ISL4 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V• L, S-band ..
UPG2214TK-E2-A ,1/2W low voltage L,S-band SPDT switch.applications from 0.5 to 3.0 GHz.• LOW INSERTION LOSS:This device can operate from 1.8 to 5.3 V wit ..
UPG2227T5F-E2-A , NECs L-BAND SP3T SWITCH
UPG2250T5N-E2-A , 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
UPG2311T5F-E2-A , GAAS INTEGRATED CIRCUIT
UPG2314T5N , POWER AMPLIFIER FOR BluetoothTM Class 1
VNB10N07 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitPowerSO-10 SOT-82FM ISOWATT220D2PAKV Drain-source ..
VNB10N07TR-E ,OMNIFET :FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitPowerSO-10 SOT-82FM ISOWATT220D2PAKV Drain-source ..
VNB14N04 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitPowerSO-10 SOT-82FM ISOWATT220D2PAKV Drain-source ..
VNB14NV04 ,"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETFEATURES - OVERTEMPERATURE AND SHORT CIRCUITPROTECTION:During normal operation, the INPUT pin isele ..
VNB14NV04-E ,OMNIFET II :FULLY AUTOPROTECTED POWER MOSFETBlock diagram . . . . 5Figure 2. Current and voltage conventions . . . . . 6Figure 3. S ..
VNB14NV04TR-E ,OMNIFET II :FULLY AUTOPROTECTED POWER MOSFETapplications. Built-in ■ Direct access to the gate of the Power thermal shutdown, linear current li ..
UPG2214TK-E2-A
