| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPG106B |
NEC|NEC |
N/a |
197 |
 |
|
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
UPG132G ,L-BAND DPDT MMIC SWITCHDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG132Gμ μL-BAND SPDT SWITCHDESCRIPTIONμPG132G is an L-Band ..
UPG132G-E1 ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.6 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 GH ..
VN4012L ,N-Channel Enhancement-Mode Vertical DMOS FETsS-—Rev. D, 20–Nov-0011-2VN3515L/VN4012LVishay Siliconix ..
VN410 , SMART DIRECTION INDICATOR 2 CHANNEL DRIVERS
VN450 ,THREE CHANNELS HIGH SIDE SMART SOLID STATE RELAY
