| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPF76F0047GC-YEU |
NEC|NEC |
N/a |
169 |
 |
|
UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
UPG103B ,WIDE-BAND AMPLIFIERDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG103Bμ μWIDE-BAND AMPLIFIERμPG103B is GaAs integrated circu ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
VN340SP-E ,Quad high side smart power solid state relayAbsolute maximum ratingsSymbol Parameter Value UnitV Power supply voltage 45 VCC-V Reverse supply v ..
VN340SP-E ,Quad high side smart power solid state relayFeaturesThe VN340SP-E is a monolithic device developed using ST VIPower™ technology, intended to dr ..
VN340SPTR-E ,Quad high side smart power solid state relayElectrical characteristics . . . . . 54 Test circuits 75 Switching time waveforms and tr ..
