| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPDJ2020-309 |
NEC|NEC |
N/a |
98 |
 |
|
UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
UPG103B ,WIDE-BAND AMPLIFIERDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG103Bμ μWIDE-BAND AMPLIFIERμPG103B is GaAs integrated circu ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
VN3205N6 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N6 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN330SP ,QUAD HIGH SIDE SMART POWER SOLID STATE RELAYVN330SP®QUAD HIGH SIDE SMARTPOWER SOLID STATE RELAYTYPE V *R *I *Vdemag DS(on) OUT CCVN330SP V -55V ..
