Partno |
Mfg |
Dc |
Qty |
Available | Descript |
UPD9992F9-BA1-E2 |
NEC |NEC |
N/a |
1000 |
|
|
UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
UPG103B ,WIDE-BAND AMPLIFIERDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG103Bμ μWIDE-BAND AMPLIFIERμPG103B is GaAs integrated circu ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
VN2410LS ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. F, 16-Jul-0111-1TN2410L, VN2406D/L, VN2410L/LSVishay Siliconix ..
VN2450N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN2450N8 , N-Channel Enhancement-Mode Vertical DMOS FETs