| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPD9961 |
NEC |NEC |
N/a |
770 |
 |
|
UPD9991F9-BA1 ,64 chords,up to 68 tones can be played simultaneously DATA SHEET MOS INTEGRATED CIRCUIT µPD9991 RING TONE GENERATOR LSI (WITH SURROUND SOUND ..
UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
UPG103B ,WIDE-BAND AMPLIFIERDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG103Bμ μWIDE-BAND AMPLIFIERμPG103B is GaAs integrated circu ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
VN2406D ,Enhancement-Mode MOSFET TransistorsTN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETs Part Number ..
VN2406D. ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. F, 16-Jul-0111-3r – Drain-Source On-Resistance ( Ω ) I – Drain Current (A)I – Drain Cu ..
VN2406L ,N-Channel Enhancement-Mode Vertical DMOS FETsTN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETs Part Number ..
