| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPD9930G-22-DSPC |
NEC|NEC |
N/a |
3840 |
 |
|
UPD9991F9-BA1 ,64 chords,up to 68 tones can be played simultaneously DATA SHEET MOS INTEGRATED CIRCUIT µPD9991 RING TONE GENERATOR LSI (WITH SURROUND SOUND ..
UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
UPG103B ,WIDE-BAND AMPLIFIERDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG103Bμ μWIDE-BAND AMPLIFIERμPG103B is GaAs integrated circu ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
VN2222L ,N-Channel Enhancement Mode MOSFETsS-04279—Rev. F, 16-Jul-0111-3r – Drain-Source On-Resistance ( Ω ) I – Drain Current (A) I – Drain C ..
VN2222L ,N-Channel Enhancement Mode MOSFETsS-04279—Rev. F, 16-Jul-0111-1VN0610L, VN10KLS, VN2222LVishay Siliconix ..
VN2222L ,N-Channel Enhancement Mode MOSFETsS-04279—Rev. F, 16-Jul-0111-2VN0610L, VN10KLS, VN2222LVishay Siliconix ..
