Partno |
Mfg |
Dc |
Qty |
Available | Descript |
UPD65812GL-E10-NMU |
NEC|NEC |
N/a |
28 |
|
|
UPD65881GB-P01-3BS-A , MOS Integrated Circuit
UPD65881GB-P01-3BS-A , MOS Integrated Circuit
UPD65943 ,Channelless type CMOS gate array using 0.35um process0.35 μm CMOS Gate ArrayCMOS-9HD FamilySecond-generation highly Second-generation highly integrated ..
UPD65945 ,Channelless type CMOS gate array using 0.35um process0.35 μm CMOS Gate ArrayCMOS-9HD FamilySecond-generation highly Second-generation highly integrated ..
UPD6600A ,4-BIT SINGLE-CHIP MICROCONTROLLER FOR REMOTE CONTROL TRANSMISSIONFEATURES• Transmission-in-progress indication pin (S-OUT): 1• Transmitter for programmable infrared ..
UPG132G-E1 ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.6 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 GH ..
UPG133G-E1 ,L-BAND SPDT SWITCHDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG133Gμ μL-BAND SPDT SWITCHDESCRIPTIONUPG133G is an L-Band ..
UPG137GV-E1 ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : +35 dBm min. (@ VCONT = +5 V/0 V)+34 dBm typ. (@ VCONT = +3 ..