| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPD65810GL-E53-NMU |
NEC|NEC |
N/a |
75 |
 |
|
UPD65881GB-P01-3BS-A , MOS Integrated Circuit
UPD65881GB-P01-3BS-A , MOS Integrated Circuit
UPD65943 ,Channelless type CMOS gate array using 0.35um process0.35 μm CMOS Gate ArrayCMOS-9HD FamilySecond-generation highly Second-generation highly integrated ..
UPD65945 ,Channelless type CMOS gate array using 0.35um process0.35 μm CMOS Gate ArrayCMOS-9HD FamilySecond-generation highly Second-generation highly integrated ..
UPD6600A ,4-BIT SINGLE-CHIP MICROCONTROLLER FOR REMOTE CONTROL TRANSMISSIONFEATURES• Transmission-in-progress indication pin (S-OUT): 1• Transmitter for programmable infrared ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
