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UPA2780GRNECN/a50000avaiSWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE


UPA2780GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEDATA SHEETMOS FIELD EFFECT TRANSISTOR µ µ µ µ PA2780GRSWITCHINGN-CHANNEL POWER MOS FET/SCHO ..
UPA2781GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEDATA SHEETMOS FIELD EFFECT TRANSISTOR µ µ µ µ PA2781GRSWITCHINGN-CHANNEL POWER MOS FET/SCHO ..
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UPD5702TU-E2 ,2.4 GHz Si LD MOS power amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specifi ed) PART ..
UPD5710TK ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHapplications. Vcont (L) = −0.2 to +0.2 V (0 V TYP.)This device can operate from DC to 2.5GHz with l ..
UPD5710TK-E2 ,Wideband SPDT switch.APPLICATIONS• POWER HANDLING:• MOBILE COMMUNICATIONS Pin (0.1 dB) = +17.0 dBm TYP. @ f = 1.0GHz, VD ..
UPD5710TK-E2-A ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHAPPLICATIONS• POWER HANDLING:• MOBILE COMMUNICATIONS Pin (0.1 dB) = +17.0 dBm TYP. @ 1.0GHz, VDD = ..


UPA2780GR

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