| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPA1874GR-9JG-E1-A |
NEC|NEC |
N/a |
75 |
 |
|
UPA1900TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPA1900TE-T1 ,Nch enhancement type MOS FETFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPA1901TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12 3• 2.5 V drive available• Low on-state resistanceRDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID ..
UPA1901TE-T1 ,Nch enhancement type MOS FETFEATURES12 3• 2.5 V drive available• Low on-state resistanceRDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID ..
UPA1902TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTORµ PA1902N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPD4616112F9-B85LX-BC2 ,16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAMFeatures• 1,048,576 words by 16 bits organization• Fast access time: 85, 95 ns (MAX.)• Byte data co ..
