| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPA1874BGR |
RENESAS |
N/a |
5000 |
 |
|
| UPA1874BGR |
NEC|NEC |
N/a |
30000 |
|
|
UPA1874BGR-9JG-E1 ,N-channel enhancement type MOS FET
UPA1900TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPA1900TE-T1 ,Nch enhancement type MOS FETFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPA1901TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12 3• 2.5 V drive available• Low on-state resistanceRDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID ..
UPA1901TE-T1 ,Nch enhancement type MOS FETFEATURES12 3• 2.5 V drive available• Low on-state resistanceRDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
