| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPA1870GR(2)-9JG-E2 |
NEC|NEC |
N/a |
2810 |
 |
|
UPA1870GR-9JG-E1 ,N-channel enhancement type MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
UPA1871GR-9JG-E1 ,N-channel enhancement type MOS FETFEATURES3°–3°0.5• Can be driven by a 2.5-V power source0.1±0.05+0.150.6–0.1• Low on-state resistanc ..
UPA1872GR-9JG , N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1872GR-9JG-E1 ,N-channel enhancement type MOS FETFEATURES+5°3°–3°• 2.5 V drive available0.50.1±0.05+0.15• Low on-state resistance0.6–0.114RDS(on)1 = ..
UPA1874BGR-9JG-E1 ,N-channel enhancement type MOS FET
UPD4564163G5 ,64M Bit SDRAM / 4 BankDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD4564441, 4564841, 456416364M-bit Synchronous DRAM4-bank, ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
