| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPA1760G-E2/JM |
NEC|NEC |
N/a |
2017 |
 |
|
UPA1763 ,SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES3 : Source 2• Dual chip type4 : Gate 25, 6 : Drain 2• Low on-resistanceRDS(on)1 = 47.0 mΩ M ..
UPA1763G ,SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1763G-E1 ,N-channel enhancement type power MOS FET(Dual type)ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1763G-E1 ,N-channel enhancement type power MOS FET(Dual type)FEATURES3 : Source 2• Dual chip type4 : Gate 25, 6 : Drain 2• Low on-resistanceRDS(on)1 = 47.0 mΩ M ..
UPA1763G-E2 ,N-channel enhancement type power MOS FET(Dual type)DATA SHEETMOS FIELD EFFECT TRANSISTORµ PA1763SWITCHINGDUAL N-CHANNEL POWER MOS FETINDUSTRIAL USEDE ..
UPD45128163G5-A75LI-9JF-E , 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A75LI-9JF-E , 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
